IRF610
Key Features
- VGS Rated at ±20V
- Silicon Gate for Fast Switching Speed
- Low Drive Requirements
- Designed especially for high voltage,high speed applications
- Part: IRF610
- Description: N-Channel Mosfet Transistor
- Category: MOSFET
- Manufacturer: Inchange Semiconductor
- Size: 39.16 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| IRF610 | Fairchild Semiconductor | N-Channel Power MOSFET |
| IRF610B | Fairchild Semiconductor | 200V N-Channel MOSFET |
| IRF610L | Vishay | Power MOSFET |
| IRF614A | Samsung Semiconductor | Power MOSFET |
| IRF614 | Vishay | Power MOSFET |
| IRF612 | GE | FIELD EFFECT POWER TRANSISTOR |
| IRF613 | GE | FIELD EFFECT POWER TRANSISTOR |